DEVICE MODELING

[111] ANALYTICAL MODELS OF THRESHOLD VOLTAGE AND BREAKDOWN VOLTAGE OF SHORT-CHANNEL MOSFETS DERIVED FROM 2-DIMENSIONAL ANALYSIS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 453 - 461

[112] FIELD-DEPENDENT MOBILITY ANALYSIS OF FIELD-EFFECT TRANSISTOR [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (11): : 1765 - +

[113] SUBTHRESHOLD DESIGN CONSIDERATIONS FOR INSULATED GATE FIELD-EFFECT TRANSISTORS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (02) : 55 - 60

[114] ACCURATE 2-DIMENSIONAL NUMERICAL-ANALYSIS OF MOS TRANSISTOR [J]. SOLID-STATE ELECTRONICS, 1972, 15 (05) : 547 - &

[115] SHOCKLEY-LIKE EQUATIONS FOR THE CARRIER DENSITIES AND THE CURRENT FLOWS IN MATERIALS WITH A NONUNIFORM COMPOSITION [J]. SOLID-STATE ELECTRONICS, 1980, 23 (01) : 49 - 53

[116] MODIFICATION OF ICCG METHOD FOR APPLICATION TO SEMICONDUCTOR-DEVICE SIMULATORS [J]. ELECTRONICS LETTERS, 1982, 18 (06) : 265 - 266

[117] EMITTER EFFECTS IN SHALLOW BIPOLAR-DEVICES - MEASUREMENTS AND CONSEQUENCES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1402 - 1408

[118] TWO-DIMENSIONAL FINITE-ELEMENT CHARGE-SHEET MODEL OF A SHORT-CHANNEL MOS-TRANSISTOR [J]. SOLID-STATE ELECTRONICS, 1982, 25 (06) : 461 - 477

[119] FIELD-DEPENDENT MOBILITY MODEL FOR 2-DIMENSIONAL NUMERICAL-ANALYSIS OF MOSFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (07) : 1068 - 1074

[120] YAU LD, 1974, SOLID STATE ELECTRON, V17, P1059, DOI 10.1016/0038-1101(74)90145-2

[111] ANALYTICAL MODELS OF THRESHOLD VOLTAGE AND BREAKDOWN VOLTAGE OF SHORT-CHANNEL MOSFETS DERIVED FROM 2-DIMENSIONAL ANALYSIS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 453 - 461

[112] FIELD-DEPENDENT MOBILITY ANALYSIS OF FIELD-EFFECT TRANSISTOR [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (11): : 1765 - +

[113] SUBTHRESHOLD DESIGN CONSIDERATIONS FOR INSULATED GATE FIELD-EFFECT TRANSISTORS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (02) : 55 - 60

[114] ACCURATE 2-DIMENSIONAL NUMERICAL-ANALYSIS OF MOS TRANSISTOR [J]. SOLID-STATE ELECTRONICS, 1972, 15 (05) : 547 - &

[115] SHOCKLEY-LIKE EQUATIONS FOR THE CARRIER DENSITIES AND THE CURRENT FLOWS IN MATERIALS WITH A NONUNIFORM COMPOSITION [J]. SOLID-STATE ELECTRONICS, 1980, 23 (01) : 49 - 53

[116] MODIFICATION OF ICCG METHOD FOR APPLICATION TO SEMICONDUCTOR-DEVICE SIMULATORS [J]. ELECTRONICS LETTERS, 1982, 18 (06) : 265 - 266

[117] EMITTER EFFECTS IN SHALLOW BIPOLAR-DEVICES - MEASUREMENTS AND CONSEQUENCES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1402 - 1408

[118] TWO-DIMENSIONAL FINITE-ELEMENT CHARGE-SHEET MODEL OF A SHORT-CHANNEL MOS-TRANSISTOR [J]. SOLID-STATE ELECTRONICS, 1982, 25 (06) : 461 - 477

[119] FIELD-DEPENDENT MOBILITY MODEL FOR 2-DIMENSIONAL NUMERICAL-ANALYSIS OF MOSFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (07) : 1068 - 1074

[120] YAU LD, 1974, SOLID STATE ELECTRON, V17, P1059, DOI 10.1016/0038-1101(74)90145-2