VIBRATIONAL-MODE NITROGEN AND CARBON ISOTOPE SHIFTS ON THE N1(0.746 EV) PHOTOLUMINESCENCE SPECTRUM IN SILICON

被引：7

作者：

DORNEN, A

PENSL, G

SAUER, R

机构：

[1] UNIV ERLANGEN NURNBERG,INST ANGEW PHYS,D-8520 ERLANGEN,FED REP GER

[2] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 1,FED REP GER

来源：

关键词：

D O I：

10.1016/0038-1098(86)90167-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：861 / 864

页数：4

共 19 条

[1] ABE T, 1981, SEMICONDUCTOR SILICO, P54
[2] APPELS JA, 1970, PHILIPS RES REP, V25, P118
[3] STATUS OF AMORPHOUS THIN-FILM SOLAR-CELLS
DAS, SR
[J]. THIN SOLID FILMS, 1984, 119 (01) : 31 - 54
[4] EPITAXIAL SILICON LAYERS GROWN ON ION-IMPLANTED SILICON-NITRIDE LAYERS
DEXTER, RJ
PICRAUX, ST
WATELSKI, SB
[J]. APPLIED PHYSICS LETTERS, 1973, 23 (08) : 455 - 457
[5] DORNEN A, 1985, PHYS REV B 1215
[6] THE OXIDATION-INHIBITION IN NITROGEN-IMPLANTED SILICON
JOSQUIN, WJMJ
TAMMINGA, Y
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (08) : 1803 - 1811
[7] KAPLYANSKII AA, 1964, OPT SPEKTROSK, V16, P329
[8] NITROGEN-IMPLANTED SILICON .2. ELECTRICAL PROPERTIES
MITCHELL, JB
SHEWCHUN, J
THOMPSON, DA
DAVIES, JA
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (01) : 335 - 343
[9] MURAKAMI K, 1985, 17TH P INT C PHYS SE, P1493
[10] ORIGIN OF THE 0.97 EV LUMINESCENCE IN IRRADIATED SILICON
ODONNELL, KP
LEE, KM
WATKINS, GD
[J]. PHYSICA B & C, 1983, 116 (1-3): : 258 - 263