CHROMIUM-DOPED SEMIINSULATING INP GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

被引：5

作者：

HARLOW, MJ ^{[1
]}

DUNCAN, WJ ^{[1
]}

LEALMAN, IF ^{[1
]}

SPURDENS, PC ^{[1
]}

机构：

[1] BT LABS,MARTLESHAM HEATH,IPSWICH IP5 7RE,SUFFOLK,ENGLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1994年 / 140卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(94)90490-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Growth of chromium-doped, semi-insulating InP by metal-organic vapour phase epitaxy is described. Both hexacarbonyl chromium and bis-benzene chromium are shown to be efficient Cr precursors. The purity, structural and electrical properties of the layers are described. A compensating deep donor concentration of up to 3 x 10(16) cm-3 is reported with resistivity as high as 3 x 10(8) OMEGA cm. It is further shown that when Cr-doped InP is employed as a current blocking layer in buried heterostructure lasers, improved performance may be obtained compared with similar iron containing structures.

引用

页码：19 / 27

页数：9

共 30 条

[1]

Alferov Zh. I., 1982, Soviet Technical Physics Letters, V8, P296

[2] ANALYSIS OF LEAKAGE CURRENT IN BURIED HETEROSTRUCTURE LASERS WITH SEMIINSULATING BLOCKING LAYERS [J].

ASADA, S ;

SUGOU, S ;

KASAHARA, KI ;

KUMASHIRO, S .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1989, 25 (06) :1362-1368

[3] GROWTH OF SEMI-INSULATING EPITAXIAL GALLIUM-ARSENIDE BY CHROMIUM DOPING IN METAL-ALKYL+HYDRIDE SYSTEM [J].

BASS, SJ .

JOURNAL OF CRYSTAL GROWTH, 1978, 44 (01) :29-33

[4] NEW SEMIINSULATING INP - TITANIUM MIDGAP DONORS [J].

BRANDT, CD ;

HENNEL, AM ;

PAWLOWICZ, LM ;

WU, YT ;

BRYSKIEWICZ, T ;

LAGOWSKI, J ;

GATOS, HC .

APPLIED PHYSICS LETTERS, 1986, 48 (17) :1162-1164

[5]

BREMOND G, 1988, SEMI-INSULATING III-V MATERIALS, MALMO 1988, P319

[6] WIDEBAND MODULATION OF 1.3 MU-M INGAASP BURIED CRESCENT LASERS WITH IRON-DOPED AND COBALT-DOPED SERMI-INSULATING CURRENT BLOCKING LAYERS [J].

CHENG, WH ;

HUANG, SY ;

APPELBAUM, A ;

POOLADDEJ, J ;

BUEHRING, KD ;

WOLF, D ;

RENNER, DS ;

HESS, KL ;

ZEHR, SW .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1989, 25 (06) :1353-1361

[7] PRECIPITATION IN FE-DOPED SEMI-INSULATING INP EPITAXIAL LAYER GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION (MOCVD) [J].

CHU, SNG ;

NAKAHARA, S ;

LONG, JA ;

RIGGS, VG ;

JOHNSTON, WD .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (11) :2795-2798

[8] PRECIPITATE IDENTIFICATION IN TI-DOPED, CR-DOPED AND NI-DOPED INP SINGLE-CRYSTALS [J].

COCKAYNE, B ;

MACEWAN, WR ;

HARRIS, IR ;

SMITH, NA .

JOURNAL OF CRYSTAL GROWTH, 1986, 76 (02) :251-258

[9]

DENTAI AG, 1988, I PHYS C SER, V91, P283

[10]

DUNCAN WJ, 1988, SEMI-INSULATING III-V MATERIALS, MALMO 1988, P301

← 1 2 3 →