共 17 条
- [1] THEORY OF OXIDE DEFECTS NEAR THE SI-SIO2 INTERFACE [J]. PHYSICAL REVIEW B, 1990, 41 (08): : 5061 - 5066
- [3] ASYMMETRICAL RELAXATION OF SIMPLE E' CENTERS IN SILICON DIOXIDE ISOMORPHS [J]. PHYSICAL REVIEW B, 1988, 37 (15): : 9000 - 9005
- [5] OXYGEN VACANCY MODEL FOR E'/1 CENTER IN SIO2 [J]. SOLID STATE COMMUNICATIONS, 1974, 14 (03) : 225 - 229
- [7] HYSTERESIS AND FRANCK-CONDON RELAXATION IN INSULATOR-SEMICONDUCTOR TUNNELING [J]. PHYSICAL REVIEW B, 1990, 41 (12): : 8313 - 8317
- [8] FOWLER WB, 1978, PHYSICS SIO2 ITS INT, P70