INVESTIGATION OF ELECTROLUMINESCENCE FROM EXCITED-STATE CARRIER POPULATIONS IN DOUBLE BARRIER RESONANT TUNNELING STRUCTURES

被引：4

作者：

COCKBURN, JW ^{[1
]}

BUCKLE, PD ^{[1
]}

SKOLNICK, MS ^{[1
]}

WHITTAKER, DM ^{[1
]}

TAGG, WIE ^{[1
]}

GREY, R ^{[1
]}

HILL, G ^{[1
]}

PATE, MA ^{[1
]}

机构：

[1] UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1992年 / 12卷 / 03期

关键词：

D O I：

10.1016/0749-6036(92)90293-E

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Electroluminescence (EL) arising from recombination of electrons in the quasiconfined quantum well states of p-i-n double barrier resonant tunnelling structures is investigated. When biased at the second electron resonance, EL recombination arises from electrons in both the ground and first excited electron states (E1 and E2 respectively) of the quantum well. Analysis of the relative intensities of the E1 and E2 EL allows the relative electron populations of the two levels to be calculated. The population ratio, n2 n1 is shown to be governed by the ratio of the inter-subband scattering time (τi) to the tunnelling-out time from E1 (τ1). We present results which demonstrate that the value of n2 n1 may be deliberately increased by decreasing the width of the collector barrier of the structure in order to reduce τ1. © 1992.

引用

页码：413 / 417

页数：5

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