SELECTIVE ETCHING OF N-TYPE GAAS IN A CRO3-HF-H2O SYSTEM UNDER LASER ILLUMINATION

被引：8

作者：

WEYHER, JL

VANDEVEN, J

机构：

来源：

JOURNAL DE PHYSIQUE | 1982年 / 43卷 / NC-5期

关键词：

D O I：

10.1051/jphyscol:1982536

中图分类号：

学科分类号：

摘要：

引用

页码：313 / 319

页数：7

共 14 条

[1] ETCHING OF DISLOCATIONS ON LOW-INDEX FACES OF GAAS [J].

ABRAHAMS, MS ;

BUIOCCHI, CJ .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) :2855-&

[2]

BAFLEUR M, 1982, THESIS CNRS TOULOUSE

[3] ELECTROCHEMICAL SECTIONING AND SURFACE FINISHING OF GAAS AND GASB [J].

ELLIOTT, CR ;

REGNAULT, JC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (07) :1557-1562

[4]

FACTOR MM, 1978, J ELECTROCHEM SOC, V125, P621

[5] NEW DEFECT-REVEALING ETCHANT FOR GAAS [J].

GREENE, LI .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (09) :3739-3741

[6] SELECTIVE PHOTOETCHING OF GALLIUM-ARSENIDE [J].

KUHNKUHNENFELD, F .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (08) :1063-+

[7] TRANSMISSION ELECTRON MICROSCOPE STUDY OF GALLIUM ARSENIDE [J].

MEIERAN, ES .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (08) :2544-&

[8] SHALLOW DEFECT ETCHING OF GAAS USING AB SOLUTION UNDER LASER ILLUMINATION [J].

MUNOZYAGUE, A ;

BAFLEUR, M .

JOURNAL OF CRYSTAL GROWTH, 1981, 53 (02) :239-248

[9] A NEW ANODIC ETCH FOR THE OBSERVATION OF DISLOCATIONS IN NORMAL-GAAS [J].

NAGATA, K ;

KOMIYA, S ;

SHIBATOMI, A ;

OHKAWA, S .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (10) :2247-2250

[10] ASYMMETRIC CRACKING IN III-V COMPOUNDS [J].

OLSEN, GH ;

ABRAHAMS, MS ;

ZAMEROWSKI, TJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (12) :1650-1656

← 1 2 →