TIME-RESOLVED PHOTOLUMINESCENCE STUDY OF MOLECULAR-BEAM EPITAXIAL-GROWTH INDUCED DEFECT LINES IN GAAS

被引：15

作者：

STEINER, T ^{[1
]}

THEWALT, MLW ^{[1
]}

KOTELES, ES ^{[1
]}

SALERNO, JP ^{[1
]}

机构：

[1] GTE LABS INC,WALTHAM,MA 02254

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 03期

关键词：

D O I：

10.1063/1.96183

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：257 / 259

页数：3

共 14 条

[1] INFRARED-ABSORPTION AND LOW-TEMPERATURE PHOTOLUMINESCENCE SPECTRA OF GAAS GROWN BY MOLECULAR-BEAM EPITAXY
AKIMOTO, K
DOHSEN, M
ARAI, M
WATANABE, N
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (09) : 922 - 924
[2] INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS
ASHEN, DJ
DEAN, PJ
HURLE, DTJ
MULLIN, JB
WHITE, AM
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (10) : 1041 - 1053
[3] AN OPTICAL CHARACTERIZATION OF DEFECT LEVELS INDUCED BY MBE GROWTH OF GAAS
CONTOUR, JP
NEU, G
LEROUX, M
CHAIX, C
LEVESQUE, B
ETIENNE, P
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 811 - 815
[4] A MODEL FOR SOME DEFECT-RELATED BOUND EXCITON LINES IN THE PHOTOLUMINESCENCE SPECTRUM OF GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
EAVES, L
HALLIDAY, DP
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (27): : L705 - L709
[5] KOTELES ES, 1985, 17TH P INT C PHYS SE, P1247
[6] THE EFFECT OF ARSENIC VAPOR SPECIES ON ELECTRICAL AND OPTICAL-PROPERTIES OF GAAS GROWN BY MOLECULAR-BEAM EPITAXY
KUNZEL, H
KNECHT, J
JUNG, H
WUNSTEL, K
PLOOG, K
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 28 (03): : 167 - 173
[7] KUNZEL H, 1980, APPL PHYS LETT, V37, P416, DOI 10.1063/1.91927
[8] KUNZEL H, 1981, I PHYS C SER, V56, P519
[9] RASHBA EI, 1962, SOV PHYS-SOL STATE, V4, P759
[10] OBSERVATION OF DISCRETE DONOR-ACCEPTOR PAIR SPECTRA IN MBE GROWN GAAS
REYNOLDS, DC
BAJAJ, KK
LITTON, CW
SMITH, EB
YU, PW
MASSELINK, WT
FISCHER, F
MORKOC, H
[J]. SOLID STATE COMMUNICATIONS, 1984, 52 (07) : 685 - 688

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