DEMONSTRATION OF A P-CHANNEL BICFET IN THE GEXSI1-X/SI SYSTEM

被引：20

作者：

TAFT, RC ^{[1
]}

PLUMMER, JD ^{[1
]}

IYER, SS ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 01期

关键词：

D O I：

10.1109/55.31666

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：14 / 16

页数：3

共 8 条

[1] A 30-PS SI BIPOLAR IC USING SUPER SELF-ALIGNED PROCESS TECHNOLOGY [J].

KONAKA, S ;

YAMAMOTO, Y ;

SAKAI, T .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (04) :526-531

[2] MEASUREMENT OF THE BAND-GAP OF GEXSI1-X/SI STRAINED-LAYER HETEROSTRUCTURES [J].

LANG, DV ;

PEOPLE, R ;

BEAN, JC ;

SERGENT, AM .

APPLIED PHYSICS LETTERS, 1985, 47 (12) :1333-1335

[3] A P-CHANNEL BICFET IN THE INGAAS/INALAS MATERIAL SYSTEM [J].

LEBBY, MS ;

TAYLOR, GW ;

IZABELLE, A ;

TELL, B ;

BROWNGOEBELER, K ;

CHANG, TY ;

SIMMONS, JG .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (06) :278-280

[4] HIGH-SPEED POLYSILICON EMITTER-BASE BIPOLAR-TRANSISTOR [J].

PARK, HK ;

BOYER, K ;

CLAWSON, C ;

EIDEN, G ;

TANG, A ;

YAMAGUCHI, T ;

SACHITANO, J .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (12) :658-660

[5]

Taylor G. W., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P817

[6] THE BIPOLAR INVERSION CHANNEL FIELD-EFFECT TRANSISTOR (BICFET) - A NEW FIELD-EFFECT SOLID-STATE DEVICE - THEORY AND STRUCTURES [J].

TAYLOR, GW ;

SIMMONS, JG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (11) :2345-2367

[7] SMALL-SIGNAL MODEL AND HIGH-FREQUENCY PERFORMANCE OF THE BICFET [J].

TAYLOR, GW ;

SIMMONS, JG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (11) :2368-2377

[8] DEMONSTRATION OF A P-CHANNEL GAAS/ALGAAS BICFET [J].

TAYLOR, GW ;

LEBBY, MS ;

IZABELLE, A ;

TELL, B ;

BROWNGOEBELER, K ;

CHANG, TY ;

SIMMONS, JG .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (02) :84-86

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