ON THE NATURE OF POINT-DEFECTS AND THE EFFECT OF OXIDATION ON SUBSTITUTIONAL DOPANT DIFFUSION IN SILICON

被引：32

作者：

TAN, TY

GOSELE, U

MOREHEAD, FF

机构：

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1983年 / 31卷 / 02期

关键词：

D O I：

10.1007/BF00616312

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：97 / 108

页数：12

共 58 条

[1] ORIENTATION DEPENDENCE OF DIFFUSION OF BORON IN SILICON [J].

ALLEN, WG ;

ANAND, KV .

SOLID-STATE ELECTRONICS, 1971, 14 (05) :397-&

[2] DIFFUSION OF SUBSTITUTIONAL IMPURITIES IN SILICON AT SHORT OXIDATION TIMES - AN INSIGHT INTO POINT-DEFECT KINETICS [J].

ANTONIADIS, DA ;

MOSKOWITZ, I .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :6788-6796

[3] OXIDATION-ENHANCED DIFFUSION OF ARSENIC AND PHOSPHORUS IN NEAR-INTRINSIC [100] SILICON [J].

ANTONIADIS, DA ;

LIN, AM ;

DUTTON, RW .

APPLIED PHYSICS LETTERS, 1978, 33 (12) :1030-1033

[4]

ANTONIADIS DA, 1981, SEMICONDUCTOR SILICO, P947

[5] INFLUENCE OF CRYSTAL ORIENTATION ON SILICON SEMICONDUCTOR PROCESSING [J].

BEAN, KE ;

GLEIM, PS .

PROCEEDINGS OF THE IEEE, 1969, 57 (09) :1469-&

[6] NEW METHOD FOR TREATING LATTICE POINT DEFECTS IN COVALENT CRYSTALS [J].

BENNEMAN, KH .

PHYSICAL REVIEW, 1965, 137 (5A) :1497-+

[7]

BOURGOIN JC, 1980, RAD EFF A, V6, P157

[8] DIFFUSION OF BORON, PHOSPHORUS, ARSENIC, AND ANTIMNY INTO (100( AND (111( SILICON SLICES [J].

CHAN, TC ;

MAI, CC .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (04) :588-&

[9] A MODEL FOR OXIDATION OF SILICON BY OXYGEN [J].

CRISTY, SS ;

CONDON, JB .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (10) :2170-2174

[10] SELF-DIFFUSION IN INTRINSIC AND EXTRINSIC SILICON [J].

FAIRFIEL.JM ;

MASTERS, BJ .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (08) :3148-&

← 1 2 3 4 5 6 →