ON THE NATURE OF POINT-DEFECTS AND THE EFFECT OF OXIDATION ON SUBSTITUTIONAL DOPANT DIFFUSION IN SILICON

被引：32

作者：

TAN, TY

GOSELE, U

MOREHEAD, FF

机构：

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1983年 / 31卷 / 02期

关键词：

D O I：

10.1007/BF00616312

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：97 / 108

页数：12

共 58 条

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