LOWERING OF THE BREAKDOWN VOLTAGE OF SILICON DIOXIDE BY ASPERITIES AND AT SPHERICAL ELECTRODES

被引：20

作者：

KLEIN, N

NEVANLINNA, O

机构：

来源：

SOLID-STATE ELECTRONICS | 1983年 / 26卷 / 09期

关键词：

D O I：

10.1016/0038-1101(83)90060-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：883 / 892

页数：10

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