RAMAN-SPECTROSCOPIC ASSESSMENT OF SI AND BE LOCAL VIBRATIONAL-MODES IN GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY

被引：16

作者：

WAGNER, J

RAMSTEINER, M

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1989年 / 25卷 / 05期

关键词：

D O I：

10.1109/3.27990

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：993 / 996

页数：4

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[9] ELECTRICAL ACTIVATION AND LOCAL VIBRATIONAL-MODE FROM SI-IMPLANTED GAAS [J].

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[10] THE PASSIVATION OF BE ACCEPTORS IN GAAS BY EXPOSURE TO A HYDROGEN PLASMA [J].

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SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (04) :356-360

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