CHEMICAL VAPOR-DEPOSITION OF ALXOYNZ FILMS

被引：16

作者：

SILVESTRI, VJ ^{[1
]}

IRENE, EA ^{[1
]}

ZIRINSKY, S ^{[1
]}

KUPTSIS, JD ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598

来源：

关键词：

D O I：

10.1007/BF02666228

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：429 / 444

页数：16

共 20 条

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[13] OSBURN C, TO BE PUBLISHED
[14] SOLID-SOLUTION IN TERNARY-SYSTEM, SI3N4-AIN-AL2O3
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (05) : 760 - &
[15] SILICON OXYNITRIDE FILMS FROM NO-NH3-SIH4 REACTION
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[16] ELECTRON PROBE MICROANALYSIS
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[J]. SURFACE SCIENCE, 1971, 25 (01) : 80 - &
[17] RF SPUTTERED ALUMINUM OXIDE FILMS ON SILICON
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[18] TSJUIDE T, 1972, JAPAN J APPL PHYS, V11, P600
[19] ZACHARIASEN WH, 1932, J AM CHEM SOC, V54, P38
[20] [No title captured]