SCATTERING MECHANISMS IN (AL,GA) AS/GAAS 2DEG STRUCTURES

被引：39

作者：

HARRIS, JJ

FOXON, CT

LACKLISON, DE

BARNHAM, KWJ

机构：

[1] Philips Research Lab, Redhill, Engl, Philips Research Lab, Redhill, Engl

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1986年 / 2卷 / 06期

关键词：

D O I：

10.1016/0749-6036(86)90116-3

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：563 / 568

页数：6

共 16 条

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[9] MOBILITY OF THE TWO-DIMENSIONAL ELECTRON-GAS AT SELECTIVITY DOPED N-TYPE ALXGA1-XAS/GAAS HETEROJUNCTIONS WITH CONTROLLED ELECTRON CONCENTRATIONS [J].

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[10] LOW FIELD MOBILITY OF 2-D ELECTRON-GAS IN MODULATION DOPED ALXGA1-XAS/GAAS LAYERS [J].

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