NANOMETER-STRUCTURE WRITING ON SI(100) SURFACES USING A NON-CONTACT-MODE ATOMIC-FORCE MICROSCOPE

被引：38

作者：

WANG, DW

TSAU, LM

WANG, KL

机构：

[1] Device Research Laboratory, Department of Electrical Engineering, University of California at Los Angeles, Los Angeles

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 11期

关键词：

D O I：

10.1063/1.112068

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nanometer structures were written on Si(100) surfaces by use of a non-contact-mode atomic force microscope. The silicon oxide was formed beneath the tip by applying a negative bias voltage between a p + silicon tip and the samples. The writing resolution was mainly determined by the local chemical reactions induced by the tip and a minimum line width of about 10 nm was obtained, which is close to that achieved by scanning tunneling microscope and contact-mode atomic force microscope writing.

引用

页码：1415 / 1417

页数：3

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