A NOVEL HIGH-SPEED NANOMETRIC ELECTRON-BEAM LITHOGRAPHY SYSTEM - EB-F

被引：9

作者：

IWADATE, K

YAMAGUCHI, R

HIRATA, K

HARADA, K

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 01期

关键词：

D O I：

10.1116/1.583931

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：75 / 78

页数：4

共 10 条

[1] CHANG THP, 1976, 7TH P INT C EL ION B, P392
[2] VARIABLY SHAPED ELECTRON-BEAM LITHOGRAPHY SYSTEM, EB55 .1. SYSTEM-DESIGN
FUJINAMI, M
MATSUDA, T
TAKAMOTO, K
YODA, H
ISHIGA, T
SAITOU, N
KOMODA, T
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04): : 941 - 945
[3] HOSOKI S, 1983, Patent No. 4379250
[4] MIYAUCHI, 1985, J VAC SCI TECHNOL B, V4, P64
[5] MORITA M, 1983, JPN J APPL PHYS, V21, P659
[6] YAW CORRECTED PRECISION X-Y-STAGE FOR HIGH-THROUGHPUT ELECTRON-BEAM LITHOGRAPHY SYSTEMS
MORIYAMA, S
OZASA, S
SAITOU, N
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (01): : 102 - 105
[7] VARIABLE-SHAPED ELECTRON-BEAM DIRECT WRITING TECHNOLOGY FOR 1-MU-M VLSI FABRICATION
SAKAKIBARA, Y
OGAWA, T
KOMATSU, K
MORIYA, S
KOBAYASHI, M
KOBAYASHI, T
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (11) : 1279 - 1284
[8] SHEARER MH, 1985, J VAC SCI TECHNOL B, V4, P64
[9] A FIELD-EMISSION E-BEAM SYSTEM FOR NANOMETER LITHOGRAPHY
STEPHANI, D
KRATSCHMER, E
BENEKING, H
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04): : 1011 - 1013
[10] VARIABLE SPOT SHAPE CONTROL ELECTRONICS
WOODARD, OC
HO, CT
MICHAIL, MS
MUIR, AW
WILLIAMS, MC
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06): : 1783 - 1786