A STUDY OF GASEOUS ETCHING OF GERMANIUM BY OXYGEN

被引:18
作者
BATKIN, NT
MADIX, RJ
机构
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D O I
10.1016/0039-6028(67)90120-3
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
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页码:109 / &
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共 15 条
[1]   The orientations of crystals in electrodeposited metals [J].
Bozorth, RM .
PHYSICAL REVIEW, 1925, 26 (03) :0390-0400
[2]   APPLICATION OF THE ION BOMBARDMENT CLEANING METHOD TO TITANIUM, GERMANIUM, SILICON, AND NICKEL AS DETERMINED BY LOW-ENERGY ELECTRON DIFFRACTION [J].
FARNSWORTH, HE ;
SCHLIER, RE ;
GEORGE, TH ;
BURGER, RM .
JOURNAL OF APPLIED PHYSICS, 1958, 29 (08) :1150-1161
[3]  
FEINSTEIN LG, 1965, THESIS MIT
[6]   LOW VOLTAGE ELECTRON DIFFRACTION STUDY OF OXIDATION AND REDUCTION OF SILICON [J].
LANDER, JJ ;
MORRISON, J .
JOURNAL OF APPLIED PHYSICS, 1962, 33 (06) :2089-&
[7]   CHEMISORPTION AND ORDERED SURFACE STRUCTURES [J].
LANDER, JJ .
SURFACE SCIENCE, 1964, 1 (02) :125-164
[8]   STRUCTURES OF CLEAN SURFACES OF GERMANIUM AND SILICON .1. [J].
LANDER, JJ ;
MORRISON, J .
JOURNAL OF APPLIED PHYSICS, 1963, 34 (05) :1403-&
[9]   LOW-ENERGY ELECTRON DIFFRACTION STUDY OF SILICON SURFACE STRUCTURES [J].
LANDER, JJ ;
MORRISON, J .
JOURNAL OF CHEMICAL PHYSICS, 1962, 37 (04) :729-&
[10]   LOW-ENERGY ELECTRON-DIFFRACTION STUDY OF SURFACE REACTIONS OF GERMANIUM WITH OXYGEN AND WITH IODINE .2. [J].
LANDER, JJ ;
MORRISON, J .
JOURNAL OF APPLIED PHYSICS, 1963, 34 (05) :1411-&