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- [3] REORDERING OF IMPLANTED AMORPHOUS LAYERS IN GAAS [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1977, 33 (02): : 85 - 89
- [4] GRIMALDI MG, 1982, J APPL PHYS, V53, P1803
- [5] KLAR SS, 1977, ELECTRON LETT, V14, P22
- [7] ELECTRON-MICROSCOPY STUDY OF EFFECTS OF ANNEALING ON DEFECT STRUCTURE OF HEAVILY SILICON-DOPED GALLIUM-ARSENIDE [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 26 (02): : 657 - 669
- [8] CORRELATION BETWEEN STRUCTURAL AND ELECTRICAL PROFILES IN ION-IMPLANTED GAAS [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 49 (1-3): : 183 - 186
- [9] SADANA DK, 1979, RADIAT EFF, V2, P35