THE DEPENDENCE OF ULTRASHALLOW JUNCTION DEPTHS ON IMPACT DOSE-RATES

被引：6

作者：

SULTAN, A ^{[1
]}

CRAIG, M ^{[1
]}

REDDY, K ^{[1
]}

BANERJEE, S ^{[1
]}

ISHIDA, E ^{[1
]}

MAILLOT, P ^{[1
]}

NEIL, T ^{[1
]}

LARSON, L ^{[1
]}

机构：

[1] SEMATECH,AUSTIN,TX 78741

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 09期

关键词：

D O I：

10.1063/1.115014

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ultrashallow junctions (similar to 60 nm) are obtained using low energy BF2 (5 keV) implants in crystalline Si. The variation of junction depth as a function of the dose rate is studied for doses of 1 x 10(14) and 1 X 10(15) cm(-2). Boron diffusion is retarded in the tail region for the higher dose rates and consequently the junction depth decreases as compared to the lower dose rates. The residual defect density after a 950 degrees C, 10 a anneal for a dose of 1 X 10(15) cm(-2) is reduced for the higher dose rate as compared to the lower dose rate. (C) 1995 American Institute of Physics.

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页码：1223 / 1225

页数：3

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