DEVICE PERFORMANCE OF SHALLOW JUNCTION PMOSFETS FABRICATED USING LOW-ENERGY ION-IMPLANTATION OF B AND BF2 INTO CRYSTALLINE AND GE PREAMORPHIZED SILICON

被引：5

作者：

HONG, SN ^{[1
]}

RUGGLES, GA ^{[1
]}

PAULOS, JJ ^{[1
]}

WORTMAN, JJ ^{[1
]}

RUSSELL, PE ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT MAT SCI & ENGN,RALEIGH,NC 27695

来源：

ELECTRONICS LETTERS | 1989年 / 25卷 / 16期

关键词：

D O I：

10.1049/el:19890736

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1100 / 1101

页数：2

共 9 条

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[7]

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[8] ELECTRICAL CHARACTERISTICS AND CONTACT RESISTANCE OF B+-IMPLANTED AND BF2+-IMPLANTED SILICON DIODES WITH FURNACE AND RAPID THERMAL ANNEALING [J].

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[9] CURRENT CROWDING EFFECTS AND DETERMINATION OF SPECIFIC CONTACT RESISTIVITY FROM CONTACT END RESISTANCE (CER) MEASUREMENTS [J].

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