ION-BEAM-INDUCED EPITAXIAL CRYSTALLIZATION OF IMPLANTED AND CHEMICAL VAPOR-DEPOSITED AMORPHOUS-SILICON

被引：5

作者：

LAFERLA, A ^{[1
]}

PRIOLO, F ^{[1
]}

SPINELLA, C ^{[1
]}

RIMINI, E ^{[1
]}

BAROETTO, F ^{[1
]}

FERLA, G ^{[1
]}

机构：

[1] SGS THOMSON, CATANIA, ITALY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1989年 / 39卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(89)90794-5

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：311 / 317

页数：7

共 27 条

[21] RADIATION-ENHANCED DIFFUSION OF AU IN AMORPHOUS SI [J].

PRIOLO, F ;

POATE, JM ;

JACOBSON, DC ;

LINNROS, J ;

BATSTONE, JL ;

CAMPISANO, SU .

APPLIED PHYSICS LETTERS, 1988, 52 (15) :1213-1215

[22]

PRIOLO F, 1988, J MATER RES NOV, P3

[23]

PRIOLO F, 1989, IN PRESS APPL PHYS L

[24] EFFECTS OF ELECTRICALLY ACTIVE IMPURITIES ON THE EPITAXIAL REGROWTH RATE OF AMORPHIZED SILICON AND GERMANIUM [J].

SUNI, I ;

GOLTZ, G ;

NICOLET, MA ;

LAU, SS .

THIN SOLID FILMS, 1982, 93 (1-2) :171-178

[25]

VONALLMEN M, 1979, APPL PHYS LETT, V35, P290

[26]

Williams J.W., 1984, ION IMPLANTATION BEA

[27] DOMINANT INFLUENCE OF BEAM-INDUCED INTERFACE REARRANGEMENT ON SOLID-PHASE EPITAXIAL CRYSTALLIZATION OF AMORPHOUS-SILICON [J].

WILLIAMS, JS ;

ELLIMAN, RG ;

BROWN, WL ;

SEIDEL, TE .

PHYSICAL REVIEW LETTERS, 1985, 55 (14) :1482-1485

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