A SIMPLE-MODEL FOR SCALED MOS-TRANSISTORS THAT INCLUDES FIELD-DEPENDENT MOBILITY

被引：12

作者：

GARVERICK, SL

SODINI, CG

机构：

[1] MIT, Cambridge, MA, USA, MIT, Cambridge, MA, USA

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1987年 / 22卷 / 01期

关键词：

FIELD-DEPENDENT MOBILITY - MOS TRANSISTORS;

D O I：

10.1109/JSSC.1987.1052681

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：111 / 114

页数：4

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