EFFECTS OF EMITTER-BASE CONTACT SPACING ON THE CURRENT GAIN IN HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：11

作者：

LIU, W

HARRIS, JS

机构：

[1] Solid State Laboratory, Stanford University, CA, 94305

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1992年 / 31卷 / 08期

关键词：

HBT; CURRENT GAIN; EMITTER-BASE CONTACT SPACING;

D O I：

10.1143/JJAP.31.2349

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The minimum emitter-base contact spacing necessary to prevent current gain degradation is discussed for Npn heterojunction bipolar transistors designed for high-speed applications. Theoretical calculations are performed for various base doping levels, base thicknesses, and emitter widths. These results indicate that the minimum spacing for different design parameters varies between 400 angstrom and 1300 angstrom.

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页码：2349 / 2351

页数：3

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