ELECTRICAL CHARACTERIZATION OF EPITAXIALLY OVERGROWN SI IN SI(111)/COSI2/SI METAL BASE TRANSISTOR

被引:7
作者
DELAGE, S
BADOZ, PA
ROSENCHER, E
DAVITAYA, FA
机构
[1] CNET, Meylan, Fr, CNET, Meylan, Fr
关键词
SEMICONDUCTING SILICON - Growth;
D O I
10.1049/el:19860145
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Epitaxial Si LT AN BR 111 RT AN BR /CoSi//2/Si heterostructures have been grown using molecular beam epitaxy (MBE) apparatus with the overgrown Si layer doped by Sb coevaporation. Electrical characteristics of the top CoSi//2/Si epitaxial Schottky barriers are presented. Current/voltage (I/V), capacitance/voltage (C/V) characteristics and deep level transient spectra (DLTS) show that the overgrown Si material is deviceworthy. Transconductance measurements between the emitter and collector of the metal base transistor (MBT) indicate that the high Si quality is obtained with a negligible pinhole density in the base. Measurements of the current gain alpha in the MBT confirm a value of the CoSi//2 ballistic mean free path of 90 A plus or minus 20 A.
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页码:207 / 209
页数:3
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