STUDIES OF TI-W METALLIZATION SYSTEM ON SI

被引：44

作者：

HARRIS, JM

LAU, SS

NICOLET, MA

NOWICKI, RS

机构：

[1] CALTECH,PASADENA,CA 91125

[2] FAIRCHILD CAMERA & INSTR CORP,RES & DEV LAB,PALO ALTO,CA 94304

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1976年 / 123卷 / 01期

关键词：

D O I：

10.1149/1.2132743

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：120 / 124

页数：5

共 14 条

[1]

BORDERS JA, 1974, P INT C APPLICATIONS, P179

[2]

CHANG CC, 1974, CHARACTERIZATION SOL, P509

[3] PRINCIPLES AND APPLICATIONS OF ION-BEAM TECHNIQUES FOR ANALYSIS OF SOLIDS AND THIN-FILMS [J].

CHU, WK ;

MAYER, JW ;

NICOLET, MA ;

BUCK, TM ;

AMSEL, G ;

EISEN, F .

THIN SOLID FILMS, 1973, 17 (01) :1-41

[4] CORROSION RESISTANCE OF SEVERAL INTEGRATED-CIRCUIT METALLIZATION SYSTEMS [J].

CUNNINGHAM, JA ;

FULLER, CR ;

HAYWOOD, CT .

IEEE TRANSACTIONS ON RELIABILITY, 1970, R 19 (04) :182-+

[5]

GOLDSCHMIDT HJ, 1967, INTERSTITIAL ALLOYS, P323

[6] KINETICS OF SILICIDE FORMATION BY THIN-FILMS OF V ON SI AND SIO2 SUBSTRATES [J].

KRAUTLE, H ;

NICOLET, MA ;

MAYER, JW .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (08) :3304-3308

[7]

KRAUTLE H, 1973, PHYS STATUS SOLIDI A, V10, pK33

[8] EVALUATION OF GLANCING ANGLE X-RAY-DIFFRACTION AND MEV HE-4 BACKSCATTERING ANALYSES OF SILICIDE FORMATION [J].

LAU, SS ;

CHU, WK ;

MAYER, JW ;

TU, KN .

THIN SOLID FILMS, 1974, 23 (02) :205-213

[9] REACTION-KINETICS OF TUNGSTEN THIN-FILMS ON SILICON (100) SURFACES [J].

LOCKER, LD ;

CAPIO, CD .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (10) :4366-4369

[10] *STRUKTURUNTERSUCHUNGEN AN DISILIZIDEN [J].

NOWOTNY, H ;

KIEFFER, R ;

SCHACHNER, H .

MONATSHEFTE FUR CHEMIE, 1952, 83 (05) :1243-1252

← 1 2 →