GAMMA-RADIATION EFFECTS ON MOSFETS FABRICATED WITH NMOS SUBMICROMETER TECHNOLOGY

被引：3

作者：

MANCHANDA, L

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1984年 / 5卷 / 10期

关键词：

D O I：

10.1109/EDL.1984.25967

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：412 / 414

页数：3

共 9 条

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