EFFECT OF ANISOTROPIC BAND PARAMETERS ON BAND-TO-BAND AUGER RECOMBINATION IN IN0.72GA0.28AS0.6P0.4

被引:22
作者
TAKESHIMA, M
机构
来源
PHYSICAL REVIEW B | 1984年 / 29卷 / 04期
关键词
D O I
10.1103/PhysRevB.29.1993
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
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页码:1993 / 2001
页数:9
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共 33 条
[1]   OVERLAP INTEGRALS FOR BLOCH ELECTRONS [J].
ANTONCIK, E ;
LANDSBERG, PT .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 82 (527) :337-&
[2]   RECOMBINATION IN SEMICONDUCTORS BY A LIGHT HOLE AUGER TRANSITION [J].
BEATTIE, AR ;
SMITH, G .
PHYSICA STATUS SOLIDI, 1967, 19 (02) :577-&
[3]   AUGER RECOMBINATION RATE IN INGAASP LASERS [J].
BURT, MG .
ELECTRONICS LETTERS, 1982, 18 (19) :806-807
[4]   OPTICAL-TRANSITION CROSS-SECTIONS INVOLVING IMPURITIES IN SEMICONDUCTORS [J].
CHAUDHURI, S .
PHYSICAL REVIEW B, 1982, 26 (12) :6593-6602
[5]   NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].
CHELIKOWSKY, JR ;
COHEN, ML .
PHYSICAL REVIEW B, 1976, 14 (02) :556-582
[6]   CYCLOTRON RESONANCE OF ELECTRONS AND HOLES IN SILICON AND GERMANIUM CRYSTALS [J].
DRESSELHAUS, G ;
KIP, AF ;
KITTEL, C .
PHYSICAL REVIEW, 1955, 98 (02) :368-384
[7]  
DUTTA NK, 1981, APPL PHYS LETT, V38, P407, DOI 10.1063/1.92380
[8]   THE CASE FOR AUGER RECOMBINATION IN IN1-XGAXASYP1-Y [J].
DUTTA, NK ;
NELSON, RJ .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) :74-92
[9]   INFLUENCE OF SCREENING EFFECTS ON AUGER RECOMBINATION IN SEMICONDUCTORS [J].
HAUG, A ;
EKARDT, W .
SOLID STATE COMMUNICATIONS, 1975, 17 (03) :267-268
[10]   RECOMBINATION MECHANISM IN HEAVILY DOPED SILICON [J].
HAUG, A ;
SCHMID, W .
SOLID-STATE ELECTRONICS, 1982, 25 (07) :665-667