MULTIPLE-POINT DEPTH PROFILING OF MULTILAYER CR/NI THIN-FILM STRUCTURES ON A ROUGH SUBSTRATE USING SCANNING AUGER MICROSCOPY

被引:32
作者
ZALAR, A
HOFMANN, S
ZABKAR, A
机构
[1] MAX PLANCK INST MET FORSCH,INST WERKSTOFFWISSENSCH,D-7000 STUTTGART 1,FED REP GER
[2] UNIV E KARDELJA,INST JOZEF STEFAN,YU-61000 LJUBLJANA,YUGOSLAVIA
关键词
ELECTRON BEAMS - SPECTROSCOPY; AUGER ELECTRON - SUBSTRATES;
D O I
10.1016/0040-6090(85)90384-0
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The influence of topographical effects on depth resolution was studied for multilayer Cr/Ni thin film structures which were sputter deposited onto silicon substrates with either smoothly polished or rough surfaces. The multilayer structures were analyzed using primary electron beams of two different diameters: 45 and 1 mu m. As expected, depth profiles of multilayer structures on a rough substrate obtained using the electron beam with the larger diameter show an increased broadening of the Cr-Ni interfaces. Multiple-point depth profiling enables several depth profiles of different microareas on a rough surface to be obtained simultaneously. If a microplane with a diameter larger than that of the primary electron beam is selected for analysis, considerable improvement in the depth resolution for the multilayer structure on a rough surface is obtained.
引用
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页码:149 / 154
页数:6
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