COMPARISON OF CHEMICAL ETCHES FOR REVEALING (100) SILICON CRYSTAL DEFECTS

被引：44

作者：

SCHIMMEL, DG ^{[1
]}

机构：

[1] BELL TEL LABS INC,READING,PA 19604

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1976年 / 123卷 / 05期

关键词：

D O I：

10.1149/1.2132918

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：734 / 741

页数：8

共 10 条

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[8] CHEMICAL ETCHING OF SILICON .1. THE SYSTEM HF,HNO3, AND H2O [J].

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[9] DISLOCATION ETCH FOR (100) PLANES IN SILICON [J].

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