TANTALUM SILICIDE SCHOTTKY CONTACTS TO GAAS

被引：12

作者：

LEE, CP ^{[1
]}

LIU, TH ^{[1
]}

LEI, TF ^{[1
]}

WU, SC ^{[1
]}

机构：

[1] NATL TSING HUA UNIV,DEPT PHYS,HSINCHU 300,TAIWAN

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 02期

关键词：

D O I：

10.1063/1.343097

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：642 / 645

页数：4

共 14 条

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[8] CHARACTERIZATION OF TANTALUM-SILICON FILMS ON GAAS AT ELEVATED-TEMPERATURES [J].

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[9] STABLE TANTALUM SILICIDE SCHOTTKY-BARRIER ON NORMAL-TYPE GALLIUM-ARSENIDE EVALUATED AT ELEVATED-TEMPERATURES [J].

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ELECTRONICS LETTERS, 1983, 19 (09) :330-332

[10]

Tu K. N., 1978, Thin films. Interdiffusion and reactions, P359

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