TOPOGRAPHIC IMPERFECTIONS IN ZONE-MELTING RECRYSTALLIZED SI FILMS ON SIO2

被引：14

作者：

CHEN, CK

GEIS, MW

TSAUR, BY

CHAPMAN, RL

FAN, JCC

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1984年 / 131卷 / 07期

关键词：

D O I：

10.1149/1.2115943

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1707 / 1711

页数：5

共 19 条

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[4]

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TSAUR, BY .

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[7] SOLIDIFICATION-FRONT MODULATION TO ENTRAIN SUBBOUNDARIES IN ZONE-MELTING RECRYSTALLIZATION OF SI ON SIO2 [J].

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[8] ZONE-MELTING RECRYSTALLIZATION OF SI FILMS WITH A MOVEABLE-STRIP-HEATER OVEN [J].

GEIS, MW ;

SMITH, HI ;

TSAUR, BY ;

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[9]

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[10] MORPHOLOGICAL STABILITY OF THE PLANAR SOLID-LIQUID INTERFACE [J].

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