MEASUREMENT OF THE ELECTRON VELOCITY-FIELD CHARACTERISTIC IN MODULATION-DOPED STRUCTURES USING THE GEOMETRICAL MAGNETORESISTANCE METHOD

被引：22

作者：

MASSELINK, WT

KOPP, W

HENDERSON, T

MORKOC, H

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1985年 / 6卷 / 10期

关键词：

D O I：

10.1109/EDL.1985.26222

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：539 / 541

页数：3

相关论文

共 11 条

[1] TRANSPORT IN MODULATION-DOPED STRUCTURES (ALXGA1-XAS/GAAS) AND CORRELATIONS WITH MONTE-CARLO CALCULATIONS (GAAS)
DRUMMOND, TJ
KOPP, W
MORKOC, H
KEEVER, M
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (03) : 277 - 279
[2] HOT ELECTRON EFFECTS AND SATURATION VELOCITIES IN SILICON INVERSION LAYERS
FANG, FF
FOWLER, AB
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (04) : 1825 - +
[3] SUBTHRESHOLD ELECTRON VELOCITY-FIELD CHARACTERISTICS OF GAAS AND IN0.53GA0.47AS
HAASE, MA
ROBBINS, VM
TABATABAIE, N
STILLMAN, GE
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) : 2295 - 2298
[4] MODELS FOR ELECTRON-MOBILITY AND TEMPERATURE OF TWO-DIMENSIONAL ELECTRON-GAS AT LOW AND MODERATE FIELDS
LEE, HP
VAKHSHOORI, D
LO, YH
WANG, S
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (10) : 4814 - 4816
[5] LIPPMANN HJ, 1958, Z NATURFORSCH PT A, V13, P462
[6] MAGNETORESISTANCE METHOD TO DETERMINE GAAS AND ALXGA1-XAS MOBILITIES IN ALXGA1-XAS/GAAS MODULATION-DOPED FIELD-EFFECT TRANSISTOR STRUCTURES
LOOK, DC
NORRIS, GB
KOPP, W
HENDERSON, T
MORKOC, H
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (03) : 267 - 269
[7] MEASUREMENT OF HIGH-FIELD CARRIER DRIFT VELOCITIES IN SILICON BY A TIME-OF-FLIGHT TECHNIQUE
NORRIS, CB
GIBBONS, JF
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (01) : 38 - +
[8] MEASUREMENT OF VELOCITY-FIELD CHARACTERISTIC OF GALLIUM ARSENIDE
RUCH, JG
KINO, GS
[J]. APPLIED PHYSICS LETTERS, 1967, 10 (02) : 40 - &
[9] MOBILITY OF HOLES AND ELECTRONS IN HIGH ELECTRIC FIELDS
RYDER, EJ
[J]. PHYSICAL REVIEW, 1953, 90 (05): : 766 - 769
[10] HOT-ELECTRONS IN MODULATION-DOPED GAAS-ALGAAS HETEROSTRUCTURES
SHAH, J
PINCZUK, A
STORMER, HL
GOSSARD, AC
WIEGMANN, W
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (03) : 322 - 324