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THERMAL-STABILITY AND RADIATION-STABILITY OF HYDROGEN-IMPLANTED SILICON STANDARDS FOR ION-BEAM ANALYSIS

被引：48
作者：
WHITLOW, HJ
KEINONEN, J
HAUTALA, M
HAUTOJARVI, A
机构：
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1984年 / 5卷 / 03期
关键词：
D O I：
10.1016/0168-583X(84)90008-9
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
引用
收藏
页码：505 / 510
页数：6
相关论文
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