A COMPARATIVE-STUDY OF GA(CH3)3, GA(C2H5)3 AND GA(C4H9)3 IN THE LOW-PRESSURE MOCVD OF GAAS

被引：53

作者：

PLASS, C ^{[1
]}

HEINECKE, H ^{[1
]}

KAYSER, O ^{[1
]}

LUTH, H ^{[1
]}

BALK, P ^{[1
]}

机构：

[1] RHEIN WESTFAL TH AACHEN,INST PHYS 2,D-5100 AACHEN,FED REP GER

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 88卷 / 04期

关键词：

D O I：

10.1016/0022-0248(88)90144-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：455 / 464

页数：10

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