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ETCHING RATE CHARACTERIZATION OF SIO2 AND SI USING ION ENERGY FLUX AND ATOMIC FLUORINE DENSITY IN A CF4/O2/AR ELECTRON-CYCLOTRON-RESONANCE PLASMA
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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
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SELECTIVE AND UNIFORM HIGH-RATE ETCHING OF POLYSILICON IN A MAGNETICALLY CONFINED MICROWAVE-DISCHARGE
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SIMULATION OF PLASMA-ASSISTED ETCHING PROCESSES BY ION-BEAM TECHNIQUES
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INVESTIGATION OF PLASMA-ETCHING MECHANISMS USING BEAMS OF REACTIVE GAS IONS
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