A MODEL FOR THE HALOGEN-BASED PLASMA-ETCHING OF SILICON

[1] AUVERT G, 1986, Patent No. 12296

[2] SURFACE STUDIES OF AND A MASS BALANCE MODEL FOR AR+ ION-ASSISTED CL-2 ETCHING OF SI [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (01): : 37 - 42

[3] STUDIES ON PRODUCT LAYERS FORMED DURING ETCHING OF SI IN A SF6 PLASMA [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) : 1195 - 1198

[4] ELECTRON-SPECTROSCOPY STUDY OF SILICON SURFACES EXPOSED TO XEF2 AND THE CHEMISORPTION OF SIF4 ON SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) : 2614 - 2619

[5] ION-ASSISTED AND ELECTRON-ASSISTED GAS-SURFACE CHEMISTRY - IMPORTANT EFFECT IN PLASMA-ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3189 - 3196

[6] DYNAMICS OF THE DISSOCIATIVE ADSORPTION OF CO2 ON NI(100) [J]. SURFACE SCIENCE, 1986, 167 (2-3) : 451 - 473

[7] STUDIES OF CHEMI-LUMINESCENCE ACCOMPANYING FLUORINE ATOM ETCHING OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (10) : 5273 - 5276

[8] Flamm D.L., 1981, PLASMA CHEM PLASMA P, V1, P317, DOI [10.1007/bf00565992, DOI 10.1007/BF00565992]

[9] THE REACTION OF FLUORINE-ATOMS WITH SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) : 3633 - 3639

[10] BASIC CHEMISTRY AND MECHANISMS OF PLASMA-ETCHING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (01): : 23 - 30

[1] AUVERT G, 1986, Patent No. 12296

[2] SURFACE STUDIES OF AND A MASS BALANCE MODEL FOR AR+ ION-ASSISTED CL-2 ETCHING OF SI [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (01): : 37 - 42

[3] STUDIES ON PRODUCT LAYERS FORMED DURING ETCHING OF SI IN A SF6 PLASMA [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) : 1195 - 1198

[4] ELECTRON-SPECTROSCOPY STUDY OF SILICON SURFACES EXPOSED TO XEF2 AND THE CHEMISORPTION OF SIF4 ON SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) : 2614 - 2619

[5] ION-ASSISTED AND ELECTRON-ASSISTED GAS-SURFACE CHEMISTRY - IMPORTANT EFFECT IN PLASMA-ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3189 - 3196

[6] DYNAMICS OF THE DISSOCIATIVE ADSORPTION OF CO2 ON NI(100) [J]. SURFACE SCIENCE, 1986, 167 (2-3) : 451 - 473

[7] STUDIES OF CHEMI-LUMINESCENCE ACCOMPANYING FLUORINE ATOM ETCHING OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (10) : 5273 - 5276

[8] Flamm D.L., 1981, PLASMA CHEM PLASMA P, V1, P317, DOI [10.1007/bf00565992, DOI 10.1007/BF00565992]

[9] THE REACTION OF FLUORINE-ATOMS WITH SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) : 3633 - 3639

[10] BASIC CHEMISTRY AND MECHANISMS OF PLASMA-ETCHING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (01): : 23 - 30