IONICITY AND BONDING IN A-SI1-YNY

被引：19

作者：

BAYLISS, SC ^{[1
]}

GURMAN, SJ ^{[1
]}

机构：

[1] UNIV LEICESTER,DEPT PHYS & ASTRON,LEICESTER LE1 7RH,ENGLAND

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1991年 / 127卷 / 02期

关键词：

D O I：

10.1016/0022-3093(91)90140-2

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The homopolar and heteropolar contributions to the bonding have been calculated for the amorphous non-stoichiometric binary semiconductor a-Si1-yN(y). The Penn gap for 0 < y < 1 has then been calculated for two possible structural models: the random bond network and the ordered bond network. Comparisons of these values with those obtained from optical data for this system suggest that the structure of a-Si1-yN(y) is ordered. EXAFS data for this system give independent evidence for the existence of an ordered network. The XANES part of the EXAFS spectra have been used to profile the CB DOS, giving rise to an experimentally determined CB-VB DOS, fitted to optical data and in agreement with values of the Penn gap.

引用

页码：174 / 185

页数：12

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