ANALYSIS OF BULK REVERSE CURRENT IN DIFFUSED SILICON POWER RECTIFIERS

被引:6
作者
DANNHAUSER, F
机构
关键词
D O I
10.1016/0038-1101(67)90022-6
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:361 / +
页数:1
相关论文
共 19 条
[2]  
BURTSCHER J, 1965, THESIS TECHNISCHE HO
[3]   CONTROL OF ELECTRIC FIELD AT SURFACE OF P-N JUNCTIONS [J].
DAVIES, RL ;
GENTRY, FE .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (07) :313-+
[4]   GOLD AS A RECOMBINATION CENTRE IN SILICON [J].
FAIRFIELD, JM ;
GOKHALE, BV .
SOLID-STATE ELECTRONICS, 1965, 8 (08) :685-+
[5]   ELECTRON-HOLE RECOMBINATION IN GERMANIUM [J].
HALL, RN .
PHYSICAL REVIEW, 1952, 87 (02) :387-387
[6]  
HERLET A, 1957, Z ANGEW PHYS, V9, P155
[7]  
HERLET A, 1955, Z ANGEW PHYS, V7, P195
[8]   MEASUREMENT OF THE HALL EFFECT AND CONDUCTIVITY OF SUPER-PURE SILICON [J].
HOFFMANN, A ;
REUSCHEL, K ;
RUPPRECHT, H .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 11 (3-4) :284-287
[9]   ORIENTATION DEPENDENT SHAPE OF THE P-N INTERFACE OF ALLOYED SILICON RECTIFIERS [J].
HOFFMANN, A .
SOLID-STATE ELECTRONICS, 1964, 7 (01) :101-&