OXYGEN-ADSORPTION ON THE INDIUM-ANTIMONIDE (110) SURFACE

[41] ELLIPSOMETRIC SPECTROSCOPY OF THE ZNO NONPOLAR (1100) SURFACE [J]. APPLIED PHYSICS, 1979, 18 (02): : 123 - 130

[42] ELLIPSOMETRIC STUDIES OF ADSORPTION REACTIONS ON CLEAN SURFACES [J]. SURFACE SCIENCE, 1976, 56 (01) : 37 - 48

[43] DYNAMICAL ANALYSIS OF LOW-ENERGY-ELECTRON-DIFFRACTION INTENSITIES FROM INSB(110) [J]. PHYSICAL REVIEW B, 1980, 21 (10) : 4740 - 4750

[44] ENERGY-DISTRIBUTION OF DANGLING-ORBITAL SURFACE-STATES ON THE (110) SURFACE OF III-V-COMPOUNDS [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1980, 99 (01): : K39 - K43

[45] ELECTRON-STIMULATED OXIDATION OF INP (100) SURFACES STUDIES BY AUGER-ELECTRON SPECTROSCOPY AND BY LOW-ENERGY-LOSS SPECTROSCOPY [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) : 4990 - 4995

[46] Philipp HR, 1967, SEMICOND SEMIMETALS, V3, P93, DOI [10.1016/S0080-8784(08)60316-6, DOI 10.1016/S0080-8784(08)60316-6]

[47] CHEMISORPTION AND OXIDATION STUDIES OF (110) SURFACES OF GAAS, GASB, AND INP [J]. PHYSICAL REVIEW B, 1978, 18 (06): : 2792 - 2806

[48] VALENCE BAND STUDIES OF CLEAN AND OXYGEN EXPOSED GAAS(110) SURFACES [J]. SURFACE SCIENCE, 1978, 72 (02) : 298 - 320

[49] SAMPSON JAR, 1967, TECHNIQUES VACUUM UL, P130

[50] ELECTRONIC-STRUCTURE OF IDEAL AND RELAXED INSB(110) SURFACES [J]. SOLID STATE COMMUNICATIONS, 1981, 40 (12) : 1081 - 1084

[41] ELLIPSOMETRIC SPECTROSCOPY OF THE ZNO NONPOLAR (1100) SURFACE [J]. APPLIED PHYSICS, 1979, 18 (02): : 123 - 130

[42] ELLIPSOMETRIC STUDIES OF ADSORPTION REACTIONS ON CLEAN SURFACES [J]. SURFACE SCIENCE, 1976, 56 (01) : 37 - 48

[43] DYNAMICAL ANALYSIS OF LOW-ENERGY-ELECTRON-DIFFRACTION INTENSITIES FROM INSB(110) [J]. PHYSICAL REVIEW B, 1980, 21 (10) : 4740 - 4750

[44] ENERGY-DISTRIBUTION OF DANGLING-ORBITAL SURFACE-STATES ON THE (110) SURFACE OF III-V-COMPOUNDS [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1980, 99 (01): : K39 - K43

[45] ELECTRON-STIMULATED OXIDATION OF INP (100) SURFACES STUDIES BY AUGER-ELECTRON SPECTROSCOPY AND BY LOW-ENERGY-LOSS SPECTROSCOPY [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) : 4990 - 4995

[46] Philipp HR, 1967, SEMICOND SEMIMETALS, V3, P93, DOI [10.1016/S0080-8784(08)60316-6, DOI 10.1016/S0080-8784(08)60316-6]

[47] CHEMISORPTION AND OXIDATION STUDIES OF (110) SURFACES OF GAAS, GASB, AND INP [J]. PHYSICAL REVIEW B, 1978, 18 (06): : 2792 - 2806

[48] VALENCE BAND STUDIES OF CLEAN AND OXYGEN EXPOSED GAAS(110) SURFACES [J]. SURFACE SCIENCE, 1978, 72 (02) : 298 - 320

[49] SAMPSON JAR, 1967, TECHNIQUES VACUUM UL, P130

[50] ELECTRONIC-STRUCTURE OF IDEAL AND RELAXED INSB(110) SURFACES [J]. SOLID STATE COMMUNICATIONS, 1981, 40 (12) : 1081 - 1084