ENERGY-DISTRIBUTION OF DANGLING-ORBITAL SURFACE-STATES ON THE (110) SURFACE OF III-V-COMPOUNDS

被引：6

作者：

NISHIDA, M

机构：

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1980年 / 99卷 / 01期

关键词：

D O I：

10.1002/pssb.2220990155

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

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页码：K39 / K43

页数：5

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共 16 条

[1] RELATION OF SCHOTTKY BARRIERS TO EMPTY SURFACE STATES ON 3-5 SEMICONDUCTORS
EASTMAN, DE
FREEOUF, JL
[J]. PHYSICAL REVIEW LETTERS, 1975, 34 (26) : 1624 - 1627
[2] ELECTRONIC SURFACE PROPERTIES OF 3-5 SEMICONDUCTORS - EXCITONIC EFFECTS, BAND-BENDING EFFECTS, AND INTERACTIONS WITH AU AND O ADSORBATE LAYERS
GUDAT, W
EASTMAN, DE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04): : 831 - 837
[3] ANGLE-RESOLVED PHOTOEMISSION FROM GAAS (110) SURFACE-STATES
HUIJSER, A
VANLAAR, J
VANROOY, TL
[J]. PHYSICS LETTERS A, 1978, 65 (04) : 337 - 339
[4] ELECTRONIC SURFACE PROPERTIES OF UHV-CLEAVED 3-5 COMPOUNDS
HUIJSER, A
VANLAAR, J
VANROOY, TL
[J]. SURFACE SCIENCE, 1977, 62 (02) : 472 - 486
[5] ANGLE-RESOLVED PHOTOEMISSION STUDIES OF SURFACE-STATES ON (110) GAAS
KNAPP, JA
LAPEYRE, GJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04): : 757 - 760
[6] SEMICONDUCTOR SURFACE RECONSTRUCTION - RIPPLED GEOMETRY OF GAAS(110)
LUBINSKY, AR
DUKE, CB
LEE, BW
MARK, P
[J]. PHYSICAL REVIEW LETTERS, 1976, 36 (17) : 1058 - 1061
[7] HYPERFINE-STRUCTURE IN EPR-SPECTRUM OF O-2 ON GAAS SURFACES
MILLER, DJ
HANEMAN, D
[J]. PHYSICS LETTERS A, 1977, 60 (04) : 355 - 357
[8] NISHIDA M, 1978, SURF SCI, V72, P589, DOI 10.1016/0039-6028(78)90349-7
[9] APPLICATION OF MOLECULAR-ORBITAL METHOD TO CRYSTALLINE SOLIDS - CALCULATION OF ELECTRONIC-ENERGY BANDS OF DIAMOND-TYPE CRYSTALS
NISHIDA, M
[J]. JOURNAL OF CHEMICAL PHYSICS, 1978, 69 (03) : 956 - 962
[10] TREND IN ENERGY-DISTRIBUTIONS OF GA DANGLING-ORBITAL SURFACE-STATES ON GAP, GAAS AND GASB (110)
NISHIDA, M
[J]. SOLID STATE COMMUNICATIONS, 1978, 28 (07) : 551 - 554