TRANSMISSION ELECTRON-MICROSCOPY STUDIES ON LATERAL REACTION OF GAAS WITH NI

被引：13

作者：

CHEN, SH

CARTER, CB

PALMSTROM, CJ

OHASHI, T

机构：

[1] CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853

[2] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853

来源：

关键词：

D O I：

10.1063/1.96675

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：803 / 805

页数：3

共 19 条

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[13] ALLOYING REACTION IN THIN NICKEL FILMS DEPOSITED ON GAAS
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[J]. THIN SOLID FILMS, 1980, 70 (01) : 181 - 189
[14] PALMSTROM CJ, 1985, GALLIUM ARSENIDE MAT, pCH6
[15] TOPOTACTIC REACTION BETWEEN NICKEL AND GALLIUM-ARSENIDE
SCOBEY, IH
WALLACE, CA
WARD, RCC
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[16] SILICIDE FORMATION IN LATERAL DIFFUSION COUPLES
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HUNG, LS
MAYER, JW
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02): : 758 - 761
[17] LATERAL DIFFUSION OF NI AND SI THROUGH NI2SI IN NI/SI COUPLES
ZHENG, LR
HUNG, LS
MAYER, JW
MAJNI, G
OTTAVIANI, G
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (07) : 646 - 649
[18] ZHENG LR, 1984, MATER RES SOC S P, V25, P75
[19] ZHENG LR, 1985, MATER RES SOC S P, V37, P579