INFLUENCE OF CARBON AND OXYGEN ON DONOR FORMATION AT 700-DEGREES-C IN CZOCHRALSKI-GROWN SILICON

被引：33

作者：

OHSAWA, A

TAKIZAWA, R

HONDA, K

SHIBATOMI, A

OHKAWA, S

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 08期

关键词：

D O I：

10.1063/1.331461

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5733 / 5737

页数：5

共 22 条

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