MICRODEFECTS DISTRIBUTION IN CZOCHRALSKI-GROWN SILICON-CRYSTALS

被引：14

作者：

OHSAWA, A

HONDA, K

SHIBATOMI, S

OHKAWA, S

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 38卷 / 10期

关键词：

D O I：

10.1063/1.92163

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：787 / 788

页数：2

共 11 条

[1]

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MURGAI, A ;

GATOS, HC ;

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OHSAWA, A ;

HONDA, K ;

OHKAWA, S ;

SHINOHARA, K .

APPLIED PHYSICS LETTERS, 1980, 37 (02) :157-159

[6] DETERMINATION OF OXYGEN CONCENTRATION PROFILES IN SILICON-CRYSTALS OBSERVED BY SCANNING IR ABSORPTION USING SEMICONDUCTOR-LASER [J].

OHSAWA, A ;

HONDA, K ;

OHKAWA, S ;

UEDA, R .

APPLIED PHYSICS LETTERS, 1980, 36 (02) :147-148

[7] DISLOCATION ETCH FOR (100) PLANES IN SILICON [J].

SECCODARAGONA, F .

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[8] PRECIPITATION AND REDISTRIBUTION OF OXYGEN IN CZOCHRALSKI-GROWN SILICON [J].

SHIMURA, F ;

TSUYA, H ;

KAWAMURA, T .

APPLIED PHYSICS LETTERS, 1980, 37 (05) :483-486

[9] FORMATION PROCESS OF OXIDE PRECIPITATES IN CZOCHRALSKI-GROWN SILICON-CRYSTALS [J].

SHIRAI, S .

APPLIED PHYSICS LETTERS, 1980, 36 (02) :156-158

[10]

TAKASU S, COMMUNICATION

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