OXYGEN STRIATION AND THERMALLY INDUCED MICRODEFECTS IN CZOCHRALSKI-GROWN SILICON-CRYSTALS

被引：14

作者：

OHSAWA, A

HONDA, K

OHKAWA, S

SHINOHARA, K

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 02期

关键词：

D O I：

10.1063/1.91806

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：157 / 159

页数：3

共 12 条

[1] PRECIPITATION OF OXYGEN IN SILICON [J].

FREELAND, PE ;

JACKSON, KA ;

LOWE, CW ;

PATEL, JR .

APPLIED PHYSICS LETTERS, 1977, 30 (01) :31-33

[2] OXYGEN CONTENT OF SILICON SINGLE CRYSTALS [J].

KAISER, W ;

KECK, PH .

JOURNAL OF APPLIED PHYSICS, 1957, 28 (08) :882-887

[3] ELECTRICAL-PROPERTIES OF STACKING-FAULTS AND PRECIPITATES IN HEAT-TREATED DISLOCATION-FREE CZOCHRALSKI SILICON [J].

KIMERLING, LC ;

LEAMY, HJ ;

PATEL, JR .

APPLIED PHYSICS LETTERS, 1977, 30 (05) :217-219

[4] CARBON AND OXYGEN ROLE FOR THERMALLY INDUCED MICRODEFECT FORMATION IN SILICON-CRYSTALS [J].

KISHINO, S ;

MATSUSHITA, Y ;

KANAMORI, M .

APPLIED PHYSICS LETTERS, 1979, 35 (03) :213-215

[5] VIBRATIONAL ABSORPTION OF CARBON IN SILICON [J].

NEWMAN, RC ;

WILLIS, JB .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (02) :373-&

[6] DETERMINATION OF OXYGEN CONCENTRATION PROFILES IN SILICON-CRYSTALS OBSERVED BY SCANNING IR ABSORPTION USING SEMICONDUCTOR-LASER [J].

OHSAWA, A ;

HONDA, K ;

OHKAWA, S ;

UEDA, R .

APPLIED PHYSICS LETTERS, 1980, 36 (02) :147-148

[7] OXYGEN PRECIPITATION AND STACKING-FAULT FORMATION IN DISLOCATION-FREE SILICON [J].

PATEL, JR ;

JACKSON, KA ;

REISS, H .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (12) :5279-5288

[8] SILICON MATERIAL PROBLEMS IN SEMICONDUCTOR DEVICE TECHMOLOGY [J].

SCHWUTTK.GH .

MICROELECTRONICS RELIABILITY, 1970, 9 (05) :397-&

[9] DISLOCATION ETCH FOR (100) PLANES IN SILICON [J].

SECCODARAGONA, F .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (07) :948-+

[10] OXYGEN PRECIPITATION AND GENERATION OF DISLOCATIONS IN SILICON [J].

TAN, TY ;

TICE, WK .

PHILOSOPHICAL MAGAZINE, 1976, 34 (04) :615-631

← 1 2 →