OPTIMUM DESIGN OF N+-N- DOUBLE-DIFFUSED DRAIN MOSFET TO REDUCE HOT-CARRIER EMISSION

[1] ANTONIADIS DA, 1978, 50192 STANF EL LAB T

[2] DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) : 256 - 268

[3] CHARACTERIZATION OF SILICON-ON-SAPPHIRE IGFET TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (09) : 1148 - 1153

[4] THRESHOLD-VOLTAGE INSTABILITY IN MOSFETS DUE TO CHANNEL HOT-HOLE EMISSION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (01) : 83 - 94

[5] MATSUMOTO H, 1981, IEEE T ELECTRON DEV, V28, P923, DOI 10.1109/T-ED.1981.20460

[6] 1 MU-M MOSFET VLSI TECHNOLOGY .4. HOT-ELECTRON DESIGN CONSTRAINTS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 346 - 353

[7] Ogura S., 1981, International Electron Devices Meeting, P651

[8] SATOH S, 1982, S VLSI TECHNOL, P38

[9] Sing Y. W., 1980, International Electron Devices Meeting. Technical Digest, P732

[10] SUBMICROMETER MOSFET STRUCTURE FOR MINIMIZING HOT-CARRIER GENERATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) : 611 - 618

[1] ANTONIADIS DA, 1978, 50192 STANF EL LAB T

[2] DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) : 256 - 268

[3] CHARACTERIZATION OF SILICON-ON-SAPPHIRE IGFET TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (09) : 1148 - 1153

[4] THRESHOLD-VOLTAGE INSTABILITY IN MOSFETS DUE TO CHANNEL HOT-HOLE EMISSION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (01) : 83 - 94

[5] MATSUMOTO H, 1981, IEEE T ELECTRON DEV, V28, P923, DOI 10.1109/T-ED.1981.20460

[6] 1 MU-M MOSFET VLSI TECHNOLOGY .4. HOT-ELECTRON DESIGN CONSTRAINTS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 346 - 353

[7] Ogura S., 1981, International Electron Devices Meeting, P651

[8] SATOH S, 1982, S VLSI TECHNOL, P38

[9] Sing Y. W., 1980, International Electron Devices Meeting. Technical Digest, P732

[10] SUBMICROMETER MOSFET STRUCTURE FOR MINIMIZING HOT-CARRIER GENERATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) : 611 - 618