EFFECT OF OXYGEN INCORPORATION ON PROPERTIES OF RF-SPUTTERED A-SI-H FILMS

被引:4
作者
JIRANAPAKUL, K
SHIRAFUJI, J
机构
关键词
D O I
10.1016/0022-3093(86)90256-5
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
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页码:29 / 40
页数:12
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共 29 条
[21]   TIME-OF-FLIGHT MEASUREMENT OF UNDOPED GLOW-DISCHARGED A-SI-H [J].
SHIRAFUJI, J ;
MATSUI, H ;
INUISHI, Y ;
HAMAKAWA, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (05) :775-779
[22]   EFFECT OF SUBSTRATE-TEMPERATURE ON PROPERTIES OF GLOW-DISCHARGED HYDROGENATED AMORPHOUS-SILICON [J].
SHIRAFUJI, J ;
KUWAGAKI, M ;
SATO, T ;
INUISHI, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1984, 23 (10) :1278-1286
[23]   STEADY-STATE PHOTOCONDUCTIVITY IN GLOW-DISCHARGED AMORPHOUS HYDROGENATED SILICON [J].
SHIRAFUJI, J ;
KUWAGAKI, M ;
NAGATA, S .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 72 (2-3) :199-210
[24]   MICROCRYSTALLINE FORMATION IN SPUTTERED A-SI-H-FILMS [J].
SHIRAFUJI, J ;
MATSUI, H ;
NARUKAWA, A ;
INUISHI, Y ;
TANAKA, N .
SOLID STATE COMMUNICATIONS, 1983, 45 (07) :577-580
[25]  
Shirafuji J., 1981, Japanese Journal of Applied Physics, V20, P175
[26]   TEMPERATURE-DEPENDENCE OF PHOTOCONDUCTIVITY IN A-SI [J].
SPEAR, WE ;
LOVELAND, RJ ;
ALSHARBA.A .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1974, 15 (03) :410-422
[27]   LUMINESCENCE AND RECOMBINATION IN HYDROGENATED AMORPHOUS-SILICON [J].
STREET, RA .
ADVANCES IN PHYSICS, 1981, 30 (05) :593-676
[28]   LUMINESCENCE IN PLASMA-DEPOSITED SI-O ALLOYS [J].
STREET, RA ;
KNIGHTS, JC .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 42 (04) :551-560
[29]   NEW FEATURES OF THE TEMPERATURE-DEPENDENCE OF PHOTOCONDUCTIVITY IN PLASMA-DEPOSITED HYDROGENATED AMORPHOUS-SILICON ALLOYS [J].
VANIER, PE ;
DELAHOY, AE ;
GRIFFITH, RW .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) :5235-5242