INVESTIGATION OF PERSISTENT PHOTOCONDUCTIVITY IN SI-DOPED N-ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：48

作者：

KUNZEL, H ^{[1
]}

FISCHER, A ^{[1
]}

KNECHT, J ^{[1
]}

PLOOG, K ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1983年 / 32卷 / 02期

关键词：

D O I：

10.1007/BF00617831

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：69 / 78

页数：10

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