MOCVD GROWN INP/INGAAS STRUCTURES FOR OPTICAL RECEIVERS

被引:14
作者
THRUSH, EJ
CURETON, CG
BRIGGS, ATR
机构
关键词
D O I
10.1016/0022-0248(88)90633-1
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:870 / 876
页数:7
相关论文
共 9 条
[1]  
BOUD JM, 1987, 14TH INT S GALL ARS
[2]   A STUDY OF RESIDUAL BACKGROUND DOPING IN HIGH-PURITY INDIUM-PHOSPHIDE GROWN BY ATMOSPHERIC-PRESSURE OMVPE [J].
BRIGGS, ATR ;
BUTLER, BR .
JOURNAL OF CRYSTAL GROWTH, 1987, 85 (03) :535-542
[3]   INGAAS/INP PHOTODIODES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
DUPUIS, RD ;
CAMPBELL, JC ;
VELEBIR, JR .
JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :598-605
[4]  
Johnson E. S., 1987, Proceedings of the SPIE - The International Society for Optical Engineering, V796, P161, DOI 10.1117/12.941012
[5]   HIGH MOBILITY INP EPITAXIAL LAYERS PREPARED BY ATMOSPHERIC-PRESSURE MOVPE USING TRIMETHYLINDIUM DISSOCIATED FROM AN ADDUCT WITH 1,2-BIS(DIPHENYL PHOSPHINO)ETHANE [J].
MOORE, AH ;
SCOTT, MD ;
DAVIES, JI ;
BRADLEY, DC ;
FAKTOR, MM ;
CHUDZYNSKA, H .
JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :19-22
[6]  
NAKAJIMA K, 1980, J ELECTROCHEM SOC SO, V127, P1658
[7]   VERTICAL VERSUS HORIZONTAL REACTOR - AN OPTICAL STUDY OF THE GAS-PHASE IN A MOCVD REACTOR [J].
STOCK, L ;
RICHTER, W .
JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :144-150
[8]  
Thrush E. J., 1987, Chemtronics, V2, P62
[9]   SIMULATION AND MEASUREMENT OF C/V DOPING PROFILES IN MULTILAYER STRUCTURES [J].
WHITEAWAY, JEA .
IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1983, 130 (04) :165-170