CHARACTERIZATION OF DEEP LEVELS USING UNCONVENTIONAL ZERO-BIAS THERMALLY STIMULATED CURRENT IN ION-IMPLANTED SEMI-INSULATING GAAS SUBSTRATES

被引：6

作者：

CHEN, DK ^{[1
]}

DAS, MB ^{[1
]}

机构：

[1] PENN STATE UNIV, MAT RES LAB, UNIVERSITY PK, PA 16802 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 11期

关键词：

D O I：

10.1109/T-ED.1985.22303

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：2506 / 2508

页数：3

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