ELECTRICAL-PROPERTIES OF 1 MEV HELIUM IMPLANTED METAL-OXIDE-SEMICONDUCTOR STRUCTURES

被引：2

作者：

FAHRNER, WR

SCHNEIDER, CP

GOREY, EF

机构：

[1] IBM, East Fishkill Facility,, Hopewell Junction, NY, USA, IBM, East Fishkill Facility, Hopewell Junction, NY, USA

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1986年 / 95卷 / 01期

关键词：

D O I：

10.1002/pssa.2210950143

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：343 / 351

页数：9

共 20 条

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[3] PROPERTIES OF METAL-OXIDE-SEMICONDUCTOR STRUCTURES WITH BURIED LAYERS AS DEDUCED FROM NON-EQUILIBRIUM C(V) MEASUREMENTS [J].

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[5] THE EFFECT OF ANNEALING UPON THE RESISTIVITY DISTRIBUTION IN SUBSURFACE LAYERS OF SILICON IRRADIATED WITH HYDROGEN AND HELIUM-IONS [J].

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[7] RESULTS OF ION-IMPLANTATION INTO SILICON IN THE 100 MEV RANGE .1. OXYGEN AND BORON IMPLANTATION [J].

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[8]

FAHRNER WR, 1982, PHYS STATUS SOLIDI A, V71, P121, DOI 10.1002/pssa.2210710114

[9]

FAHRNER WR, 1984, ASTM C SEMICOND P SA, P77

[10]

FAHRNER WR, 1928, PHYS STAT SOL A, V74, P421

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